high performance rf for wireless infrastructure your partner in mobile communication infrastructure design
2 3 high performance rf for wireless infrastructure the block diagram above shows base station transmit (upper part, tx) and receive (lower part, rx) functions, and includes the tx feedback function (middle part, tx feedback). the signals generated in the digital baseband & control block follow the air interface standard requirements. these signals are interfaced to the dac via serial interface ser. the ser can use the lvds or jedec standard. after the signals are fed to the i-dac and q-dac, they are converted to the analog domain. before the i and q signals enter the iq modulator, they are first low-pass filtered to remove any aliasing signals. at the iq modulator, the signals are up-converted to rf using an lo signal coming from the pll/vco device, typically called the lo generator. due to device aging and variation in cell load, the up-converted signals are fed to the vga to control the power level. an additional band pass filter is needed to remove the out-of-band spurs. the clean signal is fed to the rf power board, where the desired transmit power is made. finally, the rf power signal is fed to the antenna via a duplexer. directly after the final stage amplifier, a signal coupler picks up a certain amount of the rf signal, which is attenuated and then down-mixed using the if mixer. this signal is called the observation signal, and is used to derive coefficients for the digital pre-distortion algorithm. since power levels vary, the observation is first fed to the vga to control the power level, and after band pass filtering, the signal is converted to the digital domain using an adc. the same serial interface is used to send the digital signals to the baseband processor. at the receiver, the received signal directly after the duplexer is fed to the lna for direct amplification, since the received signal level is quite low. if the first lna is mounted in the tower top, a long rf cable is used to interface the rf signals with a base transceiver station (bts). a second lna is used to amplify the received signals. band pass filtering is applied to reduce the out-of-band signal levels before these signals are applied to the if mixer. signal levels that change dramatically require a vga to maintain the full scale ranges of the i-adc and q-adc for optimal conversion performance. low pass filtering is used before the adc to remove the aliasing signals. these digital signals are interfaced to the baseband using a serial interface such as jedec. the sample clocks and lo signals are derived from clock cleaners and plls respectively. this is denoted as clock and pll / vco in the block diagram. this set-up is required to make a synchronized system. typically denoted in snrs, and in order to improve reception quality, the receive function is equipped with a second receiver, called a diversity receiver. looking for a partner who can help you meet the challenges of wireless infrastructure base station design? as a global leader in rf technology and component design, nxp semiconductors offers a complete portfolio of rf products, from low- to high-power signal conditioning and high-speed data converters that deliver advanced performance and help simplify your design and development process. our solutions range from discrete devices to modular building blocks, so you can design a highly efficient signal chain. nxp is focused on component innovation, and on architectural breakthroughs for base station rf boards. one example is the further digitization of the transmission chain, bringing digital signals closer to the antenna. another is a digital signals transmitter that achieves very high efficiency by using a switch mode power amplifier (smpa) and is software reconfigurable for multiple frequency bands. a power stronghold nxp has built a strong position in rf transistors for base station power amplifiers with reliable and innovative solutions. these include our si-based ldmos technology, which offers best in-class efficiency, power, and ruggedness, and our new, high-speed technology using gallium nitride (gan) material. optimized for doherty applications, our 8 th generation ldmos delivers unprecedented performance, helping wireless network operators increase base station efficiency. the combination of the single transistor performance with our latest achievements in 2- and 3-way doherty amplifier designs saves network operating costs as well as co 2 emissions. our products push amplifier efficiencies to ever higher levels, paving the way towards green mobile communication infrastructures. small signal, big choice choose the best-fit solution for your application from our extensive portfolio of small signal rf components including low noise amplifiers (lnas), medium power amplifiers, variable gain amplifiers (vgas), mixers, local oscillators (los), and up and down conversion ics. our portfolio is based on high performance, state-of-the-art silicon based technologies such as our qubic4 bicmos process. qubic4 components meet the performance requirements (noise figure, linearity, power efficiency) of rf base stations and allow a higher level of integration, compared to traditional gallium arsenide (gaas) components. an optimized standard for rf high speed data converters as a leader in high performance mixed-signal ic products, nxp offers an extensive selection of high-speed data converters, with digital interfaces including jesd204a (in the cgv product line), as well as cmos lvcmos and lvds ddr interfaces. nxps high-speed dacs and adcs deliver best-in-class converter core performance and ultra-stable dynamic performance across a broad temperature range. nxp is the only semiconductor vendor to offer high speed data converters, small-signal rf building blocks and rf power amplifiers, to enable system-level integration across the full radio transceiver signal chain. base station application diagram x pl l dig it al b aseb and & c ontr ol se r q - d a c pl l v c o se r i - d a c se r ad c l pf l pf b pf i/ q - mod m i x e r m i x e r v g a tx b pf mp a hp a isola t or po wer am pl ifier a nt e nn a t x/r x a nt e nn a r x1 9 0 0 x x m i x e r v g a if mix er pl l v c o dup l e x e r rx b pf l na l na t o wer mou nted am pl ifier rx b pf l na l na x l pf v g a pl l se r ad c se r ad c x l pf v g a pl l v c o if mix er if mix er c c rf po wer rf sm al l si g nal d a t a c onve r ter s pr oce ss ing brb630
4 5 mobile communication infrastructure portfolio overview rf power we offer a complete line-up of rf power transistors operating from 450 mhz right up to 3.8 ghz, covering all cellular technologies gsm/edge, cdma, (td-s)cdma, w-cdma/umts, and wimax infrastructures. the latest 2- and 3-way doherty designs are helping drive efficiency way beyond 40% in base stations for wimax, lte, w-cdma, and td-scdma, which use large peak to average ratio (par) signals. integrated doherty amplifiers from the outside, these devices look like an ordinary transistor. in fact, they are integrated doherty amplifiers that deliver the highest efficiency levels for base station applications. they are just as easy to design-in as a standard class ab transistors, so they also provide significant space and cost savings. discrete doherty amplifiers in addition to the integrated versions, nxp also offers reference designs for very efficient, high power, discrete 2- and 3- way doherty amplifiers. the 2-way designs based on the blf22ls-130 device deliver 47.0 dbm (50 w) with 43% efficiency and 15.7 db gain for wcdma applications. our flagship 3-way doherty reference design even achieves 47% efficiency at 48 dbm (63 w) output power and 15.0 db gain. the current design covers the w-cdma standard for band 1 operation and is tailored towards high yield, minimum tuning, volume manufacturing. all our reference designs are supported by comprehensive support documentation and hardware. rugged rf power transistors ruggedness is one of the most important reliability parameters for rf power transistors. nxp has led the way since introducing its first ldmos transistors nearly a decade ago. all of our transistors are designed to withstand a mismatch of 10:1 (vswr) or more. some of our 6 th generation ldmos transistors have been proven to be virtually indestructible. recently we also introduced an extremely rugged technology based on 6th generaton, hv ldmos, which can even take the place of legacy vdmos products. we could not destroy these unbreakable ldmos transistors. one example of this is the blf578xr. the next generation of ldmos rf power transistors for wireless infrastructure: nxps gen8 nxp recently announced the 8th generation of its rf power device portfolio for base stations. listening carefully to the worlds leading infrastructure providers and understanding their requirements, a holistic approach was taken during the development of gen8. this basically means that we scrutinized every little detail of a power transistor and reconsidered the entire transistor system to come up with a new generation, which performs markedly better than its predecessors and again sets standards for the industry. gen 8 clearly addresses the key trends in the wireless infrastructure industry: completing nxps rf power transistor offering: products in plastic packages (omp) nxp currently develops a complete line of overmolded plastic (omp) rf power transistors and mmics with peak powers ranging from 2.5 to 200 watts. the main benefit of plastic packages is cost effectiveness with little or no impact on performance. the range of plastic devices will complement the extensive range of rf power products nxp offers in ceramic packages for all frequency ranges and applications up to 2.45 ghz. ` increasing signal bandwidths up to 100 mhz ` cost sensitivity ` reduction in the size/weight/volume of the cabinet ` continuous need for greater electrical effciency to reduce cooling requirements and operating expenses ` ever increasing output power to unprecedented levels ` need to deploy multi-standard and future-proof solutions blf8g10ls-160 sot1204
6 7 key features ` bga720x: transmit vgas - frequency band: 700 to 2200 or 2750 mhz - gain range: 23 or 31.5 db - oip3: +36 dbm/110 ma (bga7202), +41 dbm/520 ma (bga7204) @ minimum attenuation ` bga735x: dual receive if vgas - frequency band: 50 to 250 mhz - gain range: 24 or 28 db - oip3: +44 dbm/245 ma or higher @ minimum attenuation - gain fatness: 0.1 db - differential phase error: 0.1 degrees ` best-in-class linearity (oip3) at low power consumption ` esd protection > 2 kv hbm and > 1.5 kv cdm on all pins ` hvqfn32 leadless packages (5 x 5 mm) key applications ` wireless infrastructure base stations ` multi-carrier systems these high performance variable gain amplifers (vgas) support multiple frequency bands and the latest air interfaces. they offer best-in-class linearity, very low power consumption, high immunity to out-of-band signals, spurious performance, and output power. they are ideally suited for gsm, w-cdma, wimax, lte base-station infrastructure, and multi-carrier systems. the bga7202 and bga7204 are rf vgas used in the transmit path. the bga7202 offers an output third-order intercept (oip3) of +45 dbm and 27 db of attenuation. the attenuation is controlled by means of an analog interface. the bga7204 provides an oip3 of +37 dbm and 32 db of attenuation. the attenuation is controlled by means of a digital interface. in addition, the gain curve of the bga7204 can be programmed via an spi interface. the bga7350 and bga7351 are dual, independently controlled receive if vgas that operate from 50 to 250 mhz. integrated matching improves performance in the receiver chain, because the vga can drive the flter directly into the analog-to-digital converter to ensure a constant input level. the bga7350 has a gain range of 24 db, while the bga7351 has a range of 28 db. for both devices, the maximum gain setting delivers 18 dbm output power at 1 db gain compression (p1db), with superior linear performance and overdrive performance up to +20 dbm. for gain control, each amplifer uses a separate digital gain-control code, which is provided externally through two sets of fve bits. the resulting gain fatness is 0.1 db. other features all four devices are rohs-compatible and available in space-saving hvqfn32 leadless packages that measure just 5 x 5 mm. they are unconditionally stable devices that offer esd protection at all pins and meet moisture sensitivity level 1. low noise, high linearity amplifers bgu705x the bgu705x series of low noise amplifers (lnas) provide low noise fgure (nf) of 0.6 db and high linearity output third-order intercept point of 30 dbm. this 50 ohm internally matched lna family has high input return loss and is designed to operate between 500 mhz and 3800 mhz in 4 pin compatible products. this family of products is esd protected on all terminals, and is housed in hvson10 leadless packages. and additionally offer compared to gaas based discrete equivalents better dc power consumption, high immunity to high input level signals, spurious emission performance and increased output power. vgas with superior linearity for enhanced system performance. nxp variable gain amplifiers bga7202/4, bga7350/1. manufactured in nxps innovative qubic4 process, these vgas deliver more on-chip functionality in less space, and meet the most demanding requirements for system performance. rf small signal the rf small signal domain is defined as being the parts between the dacs and high power pa and the parts between the antenna and the adcs. it comprises all the building blocks for up and down conversion as well as the if loop and the lna from the antenna. evaluation board bga7124 medium power amplifier bga7024 (leaded sot89 package) medium power amplifier bga7127 (leadless sot908 package) medium power amplifiers for wireless infrastructures nxps medium power (20 to 33 dbm) gain blocks are designed to deliver high efficiency without compromising linearity. along with improved thermal performance and esd robustness, the qubic4 process enables features such as active biasing, quiescent current adjustment, flexible vga interfaces, and power-saving shutdown modes. to save space, nxps medium power amplifier mmics are available in the smallest package size (3 x 3 mm) as well as in leadless options and sot-89 packages. nxp qubic4 process technology nxp's innovative, high performance sige:c qubic4 process lets customers implement more functions into less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing advantages. our state-of-the-art qubic4 technology and extensive ip availability speed the migration from gaas components to silicon by enabling cutting-edge products with best-in-class low noise performance, linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power. qubic is a mature process that has been in mass production since 2002 and has had continuous performance upgrades added ever since. the qubic4 process is automotive-qualified and dual-sourced in two high volume, nxp-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very low ppm in the field. qubic4+ the qubic4+ bicmos process features 0.25 m cmos with 5 metal layers for integration of dense digital logic-based smart functionality, and a set of active and passive devices for high frequency mixed-signal designs including thick top metal layers for high quality inductors. the device set includes a 37 ghz f t npns with 3.8 v breakdown voltage (bvce0) and low noise figure (nf < 1.1 @ 2 ghz), 7 ghz f t vpnps, a 28 ghz high voltage npn with 5.9 v breakdown voltage, differential and single-ended varicaps with q-factor > 30, scalable inductors with q-factor > 20, 800 mhz ft lateral pnps, 0.25 m cmos, 137, 220 & 12 to 2000 ohm/sq. poly and active resistors, a 270 ohm/sq. sicr thin film resistor, a 5.7 ff/m 2 oxide capacitor and a 5 ff/m 2 mim capacitor, 1 to 6 ff/m 2 oxide capacitors and various other devices including l-pnps, isolated nmos, 3.3 v cmos and rf-cmos oxide capacitors, and other various capacitors, including those for l-pnps, isolated nmos, 3.3 v cmos, and rf-cmos transistors. the qubic4+ process is silicon-based and ideal for applications up to 5 ghz (f t = 37 ghz , nf < 1.1 db @ 1.2 ghz), as well as for medium power amplifiers up to 33 dbm. qubic4x the qubic4x bicmos process is a sige:c-based extension of the qubic process for high frequency mixed-signal designs and offers a rich set of devices, including a 140 ghz f t npn with 2.5 v breakdown voltage and very low noise figure (nf < 1.0 @ 10 ghz), 0.25 m cmos, a variety of resistors, a 5.7 ff/m 2 oxide capacitor, and a 5 ff/m 2 mim capacitor. qubic4x is ideal for applications that typically operate at up to 30 ghz (f t = 137 ghz , nf < 0.8 db @ 10 ghz) and ultra-low noise applications such as lnas and mixers. qubic4xi the qubic4xi bicmos process further enhances the qubic4x process and offers additional features for high frequency mixed-signal designs, including 180 ghz f t npns with 1.4 v breakdown voltage and ultra-low noise figure (nf < 0.7 @ 10 ghz), 0.25 m cmos, several resistors, and a 5.7 ff/m 2 oxide capacitor, and a 5 ff/m 2 mim capacitor. qubic4xi represents the newest sige:c process, with improved f t (> 200 ghz) and even lower noise figure (nf < 0.5 7 db @ 10 ghz). it is ideal for applications beyond 30 ghz, such as lo generators.
8 9 high-speed data converters our highly competitive high-speed adcs and dacs feature three different data interfaces, including the industrys first implementation of jedec jesd204a (2008). this new standardized serial interface dramatically reduces the number of interconnect signals between data converters and logic devices. it also solves one of the major base station (and other i/q modulation communications systems) design challenges by synchronously bonding multiple data channels or lanes. adcs our single- and dual-channel adc portfolio offers more than 80 different adcs with resolutions from 8 to 16 bits, input samples rates from 20 to 125 msps, optional input buffer and low-voltage cmos, lvds/ddr and jedec jesd204a digital outputs. the adc1413d is a dual-channel 14-bit analog-to-digital converter (adc) optimized for high dynamic performance and low power at sample rates up to 125 msps. a pipelined architecture and output error correction ensure the adc1413d is accurate enough to guarantee zero missing codes over the entire operating range. supplied from a 3 v source for analog and a 1.8 v source for the output driver, it embeds two serial outputs. each lane is differential and complies with the jesd204a standard. an integrated serial peripheral interface (spi) allows the user to easily configure the adcs. a set of ic configurations is also available via the binary level control pins, which are used at power-up. the device also includes a programmable full-scale spi to allow a flexible input voltage range of 1 to 2 v (peak-to-peak). excellent dynamic performance (snr=71.4 db, sfdr=87 dbc typ) is maintained from the baseband to input frequencies of 170 mhz or more, making the adc1413d ideal for use in communications, imaging, and medical applications. dacs our dual-channel dacs portfolio offers dacs with resolutions of 10, 12 or 14 bits, output samples rates from 125 to 750 msps, and low-voltage cmos, lvds/ddr or jedec jesd204a digital inputs. the dac1408d750 is a high-speed 14-bit dual channel digital-to-analog converter (dac) with selectable, 2x, 4x or 8x interpolating filters optimized for multi-carrier wcdma transmitters up to 750 msps. thanks to its digital on-chip modulation, the dac1408d750 allows the complex pattern provided through the lanes to be converted up from baseband to if. the mixing frequency is adjusted via a serial peripheral interface (spi) with a 32-bit numerically controlled oscillator (nco) and the phase is controlled by a 16-bit register. the serial input digital interface (maximum data rate of 3.125 gbps) is compliant with the jedec jesd204a standard. nxps implementation of multiple device synchronization (mds) enables the data streams of several dacs to be sample synchronized and phase coherent. cvg C the industrys first implementation of the jesd204a serial interface cgv? (convertisseur grande vitesse), nxps 100% jedec jesd204a-compliant interface that nxp enhanced for even greater ease-of-use and improved performance: ` enhanced rate (up to 4.0 gbps) ? a 28% increase over the jedec standard 3.125 gbps ` enhanced reach (up to 100 cm) ? a 400% increase over the jedec standard 20 cm ` enhanced features (multiple dac synchronization) ? enables up to sixteen dac data streams to be sample-synchronized and phase-coherent ` comprehensive interoperability with serdes-based fpgas ? eliminates the risk and cost associated with project schedules ` nxp cgv adcs and dacs support fpgas from altera, lattice and xilinx ?giving you plug-and-play interop! adc1413d125 demoboard features qubic4+ qubic4x qubic4x release for production 2004 2006 2008 cmos/bipolar cmos 0.25 m, bipolar 0.4 m, double poly, deep trench, si cmos 0.25 m, bipolar lv 0.4 m, double poly, deep trench, sige:c cmos 0.25 m, bipolar lv 0.3 m, double poly, deep trench, sige:c lv npn f t /f max (ghz) 37/90 (si) 137/180 (sige:c) 180/200 (sige:c) hv npn f t /f max (ghz) 28/70 (si) 60/120 (sige:c) tbd (sige:c) npn bvce0: hv/lv ** 5.9 / 3.8 v 3.2 / 2.0 v 2.5 / 1.4 v v-pnp f t / bvcb0 (ghz / v) 7 / >9 planned planned cmos voltage / dual gate 2.5 / 3.3 v 2.5 v 2.5 v noise figure npn (db) 2 ghz: 1.1 10 ghz: 0.8 10 ghz: 0.5 rfcmos f t (ghz) nmos 58, pmos 19 nmos 58, pmos 19 nmos 58, pmos 19 isolation (60 db @ 10 ghz) sti and dti sti and dti sti and dti interconnection (alcu with cmp w plugs) 5 lm, 3 m top metal 5 lm, 3 m top metal 2 m m4 5 lm, 3 m top metal capacitors nw, dn, poly-poly 5 ff/ m 2 mim nw, dn, poly-poly 5 ff/ m 2 mim nw, dn, poly-poly 5 ff/ m 2 mim resistors? (?/sq) poly (64/220/330/2k), active (12, 57), high precision sicr (270) poly (64/220/330/2k), active (12, 57), high precision sicr (270) poly (64/220/330/2k), active (12, 57), high precision sicr (270) varicaps (single-ended? & differential) 2x single ended, q > 40 3x differential, q 30-50 2x single ended, q > 40 3x differential, q 30-50 2x single ended, q > 40 3x differential, q 30-50 inductors? (1.5 nh @ 2 ghz) - scalable q > 21, thick metal, deep trench isolation, high r substrate q > 21, thick metal, deep trench isolation, high r substrate q > 21, thick metal, deep trench isolation, high r substrate other devices lpnp, isolated nmos isolated-nmos lpnp, isolated-nmos mask count 31 / 32 (mim) / 33 (dg) 35 (mim) 35 (mim) qubic4+ bicmos f /f max = 37 /90 ghz +dg +tfr +vpnp +hvnpn -4ml sige:c f / f max = 137/180 ghz qubic4x sige:c f t t / f max = 18 0/200 ghz qubic4xi qubic4+ ` baseline, 0.25 m cmos, single poly, 5 metal ` digital gate density 26k gates/mm 2 ` f t /f max = 37/90 ghz ` +tfr C thin film resistor ` +dg C dual gate oxide mos ` +hvnpn C high voltage npn ` +vpnp C vertical pnp (high v early ) ` -4ml C high density 5 ff/m 2 mim capacitor ` wide range of active and high quality passive devices ` optimized for up to 5 ghz applications qubic4x ` sige:c process ` f t /f max = 137/180 ghz ` optimized for up to 30 ghz applications ` transformers qubic4xi ` sige:c process ` improves f t /f max up to 180/200 ghz ` optimized for ultra-low noise for microwave above 30 ghz
10 11 rf power transistor portfolio power ldmos transistors 700 C 1000 mhz type iso function f min (mhz) f max (mhz) cw p1db (w) v ds (v) p l (w) bo (db) ? d (%) g p (db) test signal package blf6g21-10g driver 1 2200 10 28 2 11.5 31 19.3 1-c wcdma sot538a blm6g10-30(g) mmic driver 920 960 30 28 2 11.8 11.5 29 2-c wcdma sot822-1 blf6g10l-40brn driver/fnal 700 1000 40 28 2.5 12 15 23 2-c wcdma sot1112a blf6g10(s)-45 driver/fnal 700 1000 45 28 1 16.5 8 23 2-c wcdma sot608b blp7g10s-140p(g) fnal 700 1000 140 28 32 8 32 19 2-c wcdma sot1204 blf6g10(ls)-160rn fnal 700 1000 160 32 32 7 27 22.5 2-c wcdma sot502 blf8g10ls-160 fnal 700 1000 160 28 40 7 29 22 2-c wcdma sot502b blf6g10-200rn fnal 700 1000 200 28 40 7 28.5 20 2-c wcdma sot502a blf6g10ls-200rn fnal 688 1000 200 28 40 7 28.5 20 2-c wcdma sot502b blf7g10ls-250 fnal 920 960 250 28 60 7 30 19 2-c wcdma sot502b blf6g10l(s)-260prn fnal 700 1000 260 28 40 8.1 26.5 22 2-c wcdma sot539b blf8g10ls-300p fnal 700 1000 300 28 110 7 47 16 is95 sot539b power ldmos transistors 1400 C 1700 mhz type iso function f min (mhz) f max (mhz) cw p1db (w) v ds (v) p l (w) bo (db) ? d (%) g p (db) test signal package blf6g21-10g driver 1 2200 10 28 0.7 11.5 15 18.5 2-c wcdma sot538a blf6g15l-40brn driver 1450 1550 40 28 2.5 12.0 13 22 2-c wcdma sot1112a blf7g15ls-200 fnal 1450 1550 200 28 50 6.0 29 19.5 2-c wcdma sot502b blf6g15l-250pbrn fnal 1450 1550 250 28 60 6.2 33 18.5 2-c wcdma sot1110a blf7g15ls-300p fnal 1450 1550 300 28 85 5.5 31 18 2-c wcdma sot539b power ldmos transistors 1800 C 2000 mhz type iso function f min (mhz) f max (mhz) cw p1db (w) v ds (v) p l (w) bo (db) ? d (%) g p (db) test signal package blf6g21-10g driver 1 2200 10 28 0.7 11.5 15 18.5 2-c wcdma sot538a blf6g20-40 driver 1800 2000 40 28 2.5 12.0 15 18.8 2-c wcdma sot608a blf6g20-45 driver 1800 2000 45 28 2.5 12.6 14 19.2 2-c wcdma sot608a blf6g20s-45 driver 1800 2000 45 28 2.5 12.6 14 19.2 2-c wcdma sot608b bld6g21l-50 driver 2010 2025 50 28 8 8.0 43 14.5 td-scdma sot1130a bld6g21ls-50 driver 2010 2025 50 28 8 8.0 43 14.5 td-scdma sot1130b blf6g20-75 driver 1800 2000 75 28 29.5 4.1 37.5 19 gsm edge sot502a blf6g20ls-75 driver 1800 2000 75 28 29.5 4.1 37.5 19 gsm edge sot502b blf7g20l-90p fnal 1800 2000 90 28 84 0.3 54 19 gsm edge sot1121a blf7g20ls-90p fnal 1800 2000 90 28 84 0.3 54 19 gsm edge sot1121b blf6g20-110 fnal 1800 2000 110 28 25 6.4 32 19 2-c wcdma sot502a blf6g20ls-110 fnal 1800 2000 110 28 25 6.4 32 19 2-c wcdma sot502b blf6g20ls-140 fnal 1800 2000 140 28 35.5 6.0 30 16.5 2-c wcdma sot502b blf7g20ls-140p fnal 1800 2000 140 28 60 3.7 41 17.5 gsm edge sot1121b blf7g21l(s)-160p fnal 1800 2050 160 28 45 5.5 34 18 2-c wcdma sot1121 blf6g20-180pn fnal 1800 2000 180 32 50 5.6 29.5 18 2-c wcdma sot539a blf6g20-180rn fnal 1800 2000 180 30 40 6.5 27 17.2 2-c wcdma sot502a blf6g20ls-180rn fnal 1800 2000 180 30 40 6.5 27 17.2 2-c wcdma sot502b blf7g20l-200 fnal 1805 1990 200 28 55 5.6 33 18 2-c wcdma sot502a blf7g20ls-200 fnal 1805 1990 200 28 55 5.6 33 18 2-c wcdma sot502b blf6g20-230prn fnal 1805 1880 230 30 50 6.6 29.5 16.5 2-c wcdma sot539a blf6g20s-230prn fnal 1805 1880 230 30 50 6.6 29.5 16.5 2-c wcdma sot539b blf7g20l-250p fnal 1805 1880 250 28 70 5.5 35 18 2-c wcdma sot539a blf7g20ls-250p fnal 1805 1880 250 28 70 5.5 35 18 2-c wcdma sot539b power ldmos transistors 2000 C 2200 mhz type iso function f min (mhz) f max (mhz) cw p1db (w) v ds (v) p l (w) bo (db) ? d (%) g p (db) test signal package blf6g21-10g driver 10 2200 10 28 0.7 11.5 15 18.5 2-c wcdma sot538a blp7g22-10 driver 10 2200 10 28 0.7 11.5 15 17 2-c wcdma sot1179 blm6g22-30 driver 2100 2200 30 28 2 11.8 9 29.5 2-c wcdma sot834-1 blm7g22s-60pg driver 2000 2200 60 28 3 11.5 10 29 2-c wcdma tbd blf6g22l-40bn driver 2000 2200 40 28 2.5 12.0 16 19 2-c wcdma sot1112a blf6g22l(s)-40p driver 2110 2170 40 28 13.5 4.7 30 19 2-c wcdma sot1121b3 blf6g22(s)-45 driver 2000 2200 45 28 2.5 12.6 13 18.5 2-c wcdma sot608b bld6g22l(s)-50 driver 2110 2170 50 28 8 8.0 40 14 td-scdma sot1130b blf6g22ls-75 driver 2000 2200 75 28 17 6.4 30.5 18.7 2-c wcdma sot502b blf7g22ls-100p fnal 2000 2200 100 28 20 7.0 28 18 2-c wcdma sot1121b3 blf6g22ls-100 fnal 2000 2200 100 28 25 6.0 29 18.5 2-c wcdma sot502b blf7g22l(s)-130 fnal 2000 2200 130 28 30 6.4 32 18.5 2-c wcdma sot502b blf7g22l(s)-160 fnal 2000 2200 160 28 43 5.7 30 18 2-c wcdma sot502b3 blf6g22(ls)-180pn fnal 2000 2200 180 32 50 5.6 27.5 17.5 2-c wcdma sot539b blf6g22(ls)-180rn fnal 2000 2200 180 30 40 6.5 25 16 2-c wcdma sot502b blf7g22l(s)-200 fnal 2110 2170 200 28 55 5.6 31 18.5 2-c wcdma sot502b blf7g22l(s)-250p fnal 2110 2170 250 28 70 5.5 30 17 2-c wcdma sot539b power ldmos transistors 2300 C 2700 mhz type iso function f min (mhz) f max (mhz) cw p1db (w) v ds (v) p l (w) bo (db) ? d (%) g p (db) test signal package blf7g27l(s)-75p driver 2300 2700 75 28 12 8.0 26 17 is-95 sot1121 blf6g27ls-40p driver 2500 2700 40 28 20 3.0 37 17.5 1-c wcdma sot1121 blf7g27l(s)-90p fnal 2500 2700 90 28 16 7.5 27.5 17.5 is-95 sot1121 blf7g24l(s)-100 fnal 2300 2400 100 28 14 8.5 24 18 is-95 sot502 blf7g27l(s)-100 fnal 2500 2700 100 28 25 6.0 24 17.5 is-95 sot502 blf7g24l(s)-140 fnal 2300 2400 140 28 30 6.7 22 17 is-95 sot502 blf7g27l(s)-140 fnal 2500 2700 140 28 20 8.5 22 17 is-95 sot502 blf7g27l(s)-150p fnal 2500 2700 150 28 30 7.0 27 16.5 is-95 sot539 blf7g24ls-160p fnal 2300 2400 160 28 30 7.3 27 16.5 is-95 sot1246 blf7g27ls-200p fnal 2600 2700 200 28 42 7.0 25 16.5 is-95 sot1246 power ldmos transistors 3500 C 3800 mhz type iso function f min (mhz) f max (mhz) cw p1db (w) v ds (v) p l (w) bo (db) ? d (%) g p (db) test signal package blf6g38-10(g) driver 3400 3600 10 28 2 7.0 20 14 n-cdma sot975 blf6g38(ls)-25 driver 3400 3800 25 28 4.5 7.4 24 15 n-cdma sot608 blf6g38(ls)-50 driver 3400 3800 50 28 9 7.4 23 14 n-cdma sot502 blf6g38(ls)-100 fnal 3400 3600 100 28 18.5 7.3 21.5 13 n-cdma sot502
12 13 rf small signal portfolio lnas for wireless infrastructures type package vsupply (typ) @ i c = @ f = gass (typ) nf (typ) p l(1db) (typ) oip3 (typ) irl orl (v) (ma) (mhz) (db) (db) (dbm) (dbm) (db) (db) bgu7051 sot650 3.3 65 900 20.9 0.7 17.8 34 22 15.8 bgu7052 sot650 3.3 65 1900 20.1 0.8 18 35.5 20 15 bgu7053 sot650 3.3 65 2500 20 0.9 18 35 20 15 medium power amplifiers for wireless infrastructures supply shutdown control rf performance rf performance type package f v cc i cc v i(d)l(shdn) v i(d)h(shdn) i i(d)l(shdn) typ @ f = 940 mhz typ @ f = 1960 mhz typ typ max min max min max typ gp p l(1db) oip3 nf gp p l(1db) oip3 nf (mhz) (v) (ma) (ma) (v) (v) (v) (v) (a) (db) (dbm) (dbm) (db) (db) (dbm) (dbm) (db) bga7124 sot908 leadless 400 - 2700 5 130 200 0 0.7 2.5 vbias 4 22 25 38 5 16 24 38 5 bga7024 sot89 leaded 400 - 2700 5 110 - - - - - - 22 24 38 3 16 25 38 4 bga7127 sot908 leadless 400 - 2700 5 180 325 0 0.7 2.5 vbias 4 20 28 44 3 13 28 43 5 bga7027 sot89 leaded 400 - 2700 5 170 - - - - - - 19 28 41 3 12 28 43 4 bga7130* sot908 leadless 400 - 2700 5 - - 0 0.7 2.5 vbias 4 18 30 45 4 12 30 45 4 * = not released for mass production vgas for wireless infrastructures type package control interface vsup isup frequency gain range @ minimum attenuation @ maximum attenuation gain oip3 nf gain oip3 nf (v) (ma) (mhz) (db) (db) (dbm) (db) (db) (dbm) (db) bga7202* sot617 analog 5 710 700 1450 23 23 41 7 0 30 30 1450 2200 23 23 41 7 0 30 30 bga7204* sot617 parallel, serial 5 160 700 2750 31.5 24 37 6.5 -7.5 19 38 1450 2100 30.5 17 36 6.5 -13.5 10 38 2100 2750 29.5 16 34 7.5 -13.5 10 38 bga7350 sot617 parallel, digital 5 240 50 250 24 18.5 44 6 -5.5 50 30 bga7351 28 22 45 6 -6 50 34 bga7210 sot617 serial, digital 5 185 700 3800 31.5 31 38 6.5 -0.5 36 27 bga7350 and bga7351 are dual, independently controlled, receive if vgas on one chip. freq band (mhz) ppeak (dbm) pout-avg (dbm) vds (v) gain (db) drain eff. (%) type main transistor peak transistor 728-821 mhz 790-821 55.5 47 28 19 42 sym 1/2 blf6g10l(s)-260prn 1/2 blf6g10l(s)-260prn 790-821 57.2 49.5 32 20 42 sym blf6g10ls-200rn blf6g10ls-200rn 728-768 58 50 32 20.5 47 sym blf6g10ls-200rn blf6g10ls-200rn 869-960 mhz 869-894 52 44 28 20 48 sym blf6g10s-45 blf6g10s-45 869-894 52.7 44.5 28 15 50 3-way blf6g10s-45 2x blf6g10s-45 920-960 55.1 47.1 28 20.5 44 sym 1/2 blf6g10l(s)-260prn 1/2 blf6g10l(s)-260prn 920-960 56.2 48 28 18.5 40 sym blf6g10-135rn blf6g10-135rn 920-960 57.3 49.3 30 16 50 asym blf8g10ls-160 blf7g10ls-250 925-960 57.7 49.7 28 20.5 40 sym / mppm blf6g10l(s)-260prn blf6g10l(s)-260prn 869-894 58 50 32 20.5 46 sym blf6g10-200rn blf6g10-200rn 925-960 58.9 50.9 32 22 47 sym / mmpp blf6g10l(s)-260prn blf6g10l(s)-260prn 1476-1511 mhz 1526-1555 56.6 48.6 28 18.4 42 sym blf7g15ls-200 blf7g15ls-200 1476-1511 58.1 49.6 28 16 42 asym blf7g15ls-200 blf7g15ls-300p 1476-1511 58.6 50.6 32 16.5 42 sym blf6g15ls-250pbrn blf6g15ls-250pbrn 1805-1880 mhz (dcs) 1805-1880 52.5 44.5 28 16 44 sym 1/2 blf7g21ls-160p 1/2 blf7g21ls-160p 1805-1880 55 47 32 16 38 sym 1/2 blf6g20-230prn 1/2 blf6g20-230prn 1805-1880 55.4 47.5 31 16.3 49 asym blf7g20ls-90p blf7g21ls-160p 1805-1880 55.5 47 28 16 41 sym 1/2 blf7g20l(s)-250p 1/2 blf7g20l(s)-250p 1805-1880 56.1 48.1 30 15.2 48 asym blf7g20ls-90p blf7g20ls-200 1805-1880 57.5 49.5 30 16 42 sym blf7g20ls-200 blf7g20ls-200 1805-1880 57.9 50 32 15.5 37 sym / mmpp blf6g20-230prn blf6g20-230prn 1805-1880 58.2 50 28 16 42 sym blf7g20ls-250p blf7g20ls-250p 1805-1880 58.6 51 28 16 47.6 3-way blf7g20ls-200 2x blf7g20ls-200 1930-1990 mhz (pcs) 1930-1990 53 45 28 16.5 40 sym blf6g20-75 blf6g20-75 1930-1990 54.3 47.4 28 16.7 48.2 sym blf6g20ls-110 blf6g20ls-110 1930-1990 55.2 47.2 28 16 40 sym 1/2 blf7g20ls-250p 1/2 blf7g20ls-250p 1930-1990 55.5 47.5 28 14.5 46 asym blf7g20ls-90p blf7g20ls-200 1930-1990 56 48 31 15.3 38 sym blf6g20ls-140 blf6g20ls-140 1930-1990 56 48 28 14.8 45 asym blf7g20ls-140p blf7g20ls-200 1930-1990 57 49 30 17.2 41 sym blf7g20ls-200 blf7g20ls-200 1930-1990 58 50 32 15.5 37 sym blf6g20-230prn blf6g20-230prn 1930-1990 58.2 50 28 16 40 sym blf7g20ls-250p blf7g20ls-250p 1930-1990 58.5 50.5 30 15.7 43 3-way blf7g20ls-200 2x blf7g20ls-200 1880-2025 mhz (td-scdma) 1805-2050 52 44.5 28 15.2 41.5 sym 1/2 blf7g21ls-160p 1/2 blf7g21ls-160p 2010-2025 47 39 28 14.4 41 sym bld6g21l(s)-50 bld6g21l(s)-50 1880-2025 50 42 28 17 46 sym 1/2 blf7g20l(s)-90p 1/2 blf7g20l(s)-90p 2010-2025 50 42 28 17.2 47.2 sym 1/2 blf7g20l(s)-90p 1/2 blf7g20l(s)-90p 1880-1920 52.5 44.5 28 16 44 sym 1/2 blf7g21ls-160p 1/2 blf7g21ls-160p 2110-2170 mhz (umts / lte) 2110-2170 47 39 28 13 38 sym bld6g22l(s)-50 bld6g22l(s)-50 2110-2170 48.5 40.5 28 17.2 46 sym 1/2 blf6g22l-40p 1/2 blf6g22l-40p 2110-2170 54.7 46.5 28 16.5 43 sym blf6g22ls-100 blf6g22ls-100 2110-2170 54.9 47 28 17 43 sym blf7g22l(s)-130 blf7g22l(s)-130 2110-2170 55 47 28 17 43 sym 1/2 blf7g22ls-250p 1/2 blf7g22ls-250p 2110-2170 55 47 28 15.5 38 sym blf6g22l(s)-130 blf6g22l(s)-130 2110-2170 55.5 46.4 28 15 43 asym blf7g22l(s)-130 blf7g22l(s)-200 2110-2170 55.9 47.9 28 17.3 42 sym blf7g22ls-160 blf7g22ls-160 2110-2170 56 48 28 15 48 3-way blf7g22l(s)-130 2x blf7g22l(s)-130 2110-2170 56.5 48.5 28 16.2 41 sym blf7g22l(s)-200 blf7g22l(s)-200 2110-2170 57 49 32 14.5 41 asym blf6g22-100 blf6g22-180pn 2110-2170 57.2 49.2 28 16 47 3-way blf7g22ls-160 2x blf7g22l(s)-160 2110-2170 58 50 32 15 40 sym blf6g22-180pn blf6g22-180pn 2110-2170 58 50 32 17.5 40 sym blf7g22ls-250p blf7g22ls-250p 2300-2400 mhz (wibro / lte) 2300-2400 49.5 42 28 14.6 44 sym 1/2 blf7g27l(s)-75p 1/2 blf7g27l(s)-75p 2300-2400 55 47.5 28 15.2 44 asym blf7g24ls-100 blf7g24ls-140 2500-2700 mhz (wimax / lte) 2570-2620 49.5 42 28 15 43 sym 1/2 blf7g27l(s)-75p 1/2 blf7g27l(s)-75p 2500-2700 50 42 28 15 37.5 sym blf6g27-45 blf6g27-45 2500-2700 50.3 42.3 28 14.5 39 sym 1/2 blf7g27ls-90p 1/2 blf7g27ls-90p 2500-2600 52 44 28 14 40 asym blf6g27-45 2x blf6g27-45 2600-2700 52 44 28 14 40 asym blf6g27-45 2x blf6g27-45 2600-2700 52 44 28 14 40 asym blf6g27-45 blf6g27(ls)-100 2500-2700 52.5 44.5 28 14 38 sym 1/2 blf7g27ls-150p 1/2 blf7g27ls-150p 2620-2690 55.2 47.2 30 15 41 asym blf7g27ls-100 blf7g27ls-140 2545-2575 55.3 47.3 28 15 41 asym blf7g27ls-100 blf7g27ls-140 3300-3800 mhz (wimax) 3400-3600 51 43 28 11.5 32 sym blf6g38-50 blf6g38-50 power ldmos doherty designs low noise vgas for wireless infrastructures @ minimum attenuation @ maximum attenuation type package vsup isup @ frequency gain range gain p l(1 db) ip3 i nf gain p l(1 db) ip3 i nf (v) (ma) (mhz) (db) (db) (dbm) (db) (db) (db) (dbm) (db) (dbm) bgu7061* sot1301 5 185 900 35 35 -12 2 1.1 0 11 25 21.5 bgu7062* sot1301 5 185 1750 35 35 -12.5 2.5 1.23 0 11 25 21.7 bgu7063* sot1301 5 185 1950 35 35 -12 2 1.2 0 8.1 25 21.5
14 15 high-speed data converter portfolio low noise lo generator for wireless infrastructures type package f in(ref) v cc i cc noise 1 mhz offset @5.3 ghz output buffer (po) typ typ typ typ (mhz) (v) (ma) (dbc/hz) (dbm) bgx7300* sot617 10-160 3.3 140 -131 0 -10 iq modulator for wireless infrastructures output voltage gain type package bandwidth of iq modulator v cc i cc nfl (output noise floor) oip3 g v (mhz) (v) (ma) (dbm/hz) (dbm) (db) bgx7100* sot616 650 5 180 -159 27 1.5 dual mixer for wireless infrastructures type package second order spur rejection (2rf-2lo) v cc i cc frequency range nf ssb (small signal noise figure) iip3 conversion gain (dbc) (v) (ma) (ghz) (db) (dbm) (db) bgx7220* sot617 60 5 380 0.7 - 1.2 10 26 7.5 bgx7221* sot617 60 5 380 1.7 - 2.7 10 26 8.5 wireless infrastructure ics high-speed adc digital interface family description input buffer ttl/ cmos lvcmos lvds/ ddr cgv? supply voltage (v) power dissipation per channel (mw) sfdr (dbc) snr (dbfs) package adc1613d series dual 16-bit adc up to 65/80/105/125msps ? 1.8 / 3.0 635 89 71.6 hvqfn56 8x8 adc1613s series single 16-bit adc up to 65/80/105/125msps ? 1.8 / 3.0 690 87 71.4 hvqfn32 7x7 adc1610s series single 16-bit adc up to 65/80/105/125msps ? ? 1.8 / 3.0 630 89 71.6 hvqfn40 6x6 adc1415s series single 14-bit adc up to 65/80/105/125msps ? ? ? 1.8 /3.0/5.0 840 87 71.4 hvqfn40 6x6 adc1413d series dual 14-bit adc up to 65/80/105/125msps ? 1.8 / 3.0 635 87 71.4 hvqfn56 8x8 adc1413s series single 14-bit adc up to 65/80/105/125msps ? 1.8 / 3.0 690 87 71.4 hvqfn32 7x7 adc1412d series dual 14-bit adc up to 65/80/105/125msps ? ? 1.8 / 3.0 610 87 71.4 hvqfn64 9x9 adc1410s series single 14-bit adc up to 65/80/105/125msps ? ? 1.8 / 3.0 630 87 71.4 hvqfn40 6x6 adc1215s series single 12-bit adc up to 65/80/105/125msps ? ? ? 1.8 /3.0/5.0 840 87 69.6 hvqfn40 6x6 adc1213d series dual 12-bit adc up to 65/80/105/125msps ? 1.8 / 3.0 635 87 69.6 hvqfn56 8x8 adc1213s series single 12-bit adc up to 65/80/105/125msps ? 1.8 / 3.0 690 87 71.4 hvqfn32 7x7 adc1212d series dual 12-bit adc up to 65/80/105/125msps ? ? 1.8 / 3.0 610 87 69.6 hvqfn64 9x9 adc1210s series single 12-bit adc up to 65/80/105/125msps ? ? 1.8 / 3.0 630 87 69.6 hvqfn40 6x6 adc1207s080 single 12-bit adc 80 msps ? ? 5,0 840 90 71 htqfp48 7x7 adc1206s series single 12-bit adc up to 40/55/70 msps ? ? 3.3 / 5.0 550 70 64 qfp44 adc1115s125 single 11-bit adc up to 125msps ? ? ? 1.8 / 3.0/5.0 840 87 66.2 hvqfn40 6x6 adc1113d125 dual 11-bit adc up to 125msps ? 1.8 / 3.0 635 87 66.2 hvqfn56 8x8 adc1113s125 single 11-bit adc up to 125msps ? 1.8 / 3.0 690 86 71,4 hvqfn32 7x7 adc1112d125 dual 11-bit adc up to 125msps ? ? 1.8 / 3.0 610 87 66.2 hvqfn56 8x8 adc1015s series single 10-bit adc up to 65/80/105/125msps ? ? ? 1.8 /3.0/5.0 840 87 61.6 hvqfn40 6x6 adc1010s series single 10-bit adc up to 65/80/105/125msps ? ? 1.8 / 3.0 630 87 61.6 hvqfn40 6x6 adc1006s series single 10-bit adc up to 55/70 msps ? ? 3.3 / 5.0 550 71 59 qfp44 adc1005s060 single 10-bit adc 60 msps ? 5.0 312 72 58 ssop28 adc1004s series single 10-bit adc 30/40/50 msps ? 5.0 175 72 58 ssop28 adc1003s series single 10-bit adc 30/40/50 msps ? 5.0 235 70 58 ssop28 adc1002s020 single 10-bit adc 20 msps ? 3 to 5.25 53 72 60 lqfp32 adc0808s series single 8-bit adc up to 125/250 msps ? 1.8 / 3.3 215 56 48 htqfp48 7x7 adc0804s series single 8-bit adc up to 30/40/50 msps ? 5.0 175 72 49 ssop28 adc0801s040 single 8-bit adc 40 msps ? ? 2.7 to 5.5 30 59 47 ssop20 high-speed dac digital interface family description lvcmos cgv? supply voltage (v) power dissipation per channel (mw) sfdr (dbc) interpolation package dac1408d series dual 14-bit dac up to 650/750 msps ? 1.8 / 3.3 700 76 2x, 4x, 8x hvqfn64 9x9 dac1405d series dual 14-bit dac up to 650/750 msps ? 1.8 / 3.3 435 77 2x, 4x, 8x htqfp100 14x14 dac1403d160 dual 14-bit dac 160 msps ? 3.3 210 80 2x htqfp80 12x12 dac1401d125 dual 14-bit dac 125 msps ? 3.3 95 88 - lqfp48 dac1208d series dual 12-bit dac up to 650/750 msps ? 1.8 / 3.3 700 76 2x, 4x, 8x hvqfn64 9x9 dac1205d series dual 12-bit dac up to 650/750 msps ? 1.8 / 3.3 435 80 2x, 4x, 8x htqfp100 14x14 dac1203d160 dual 12-bit dac 160 msps ? 3.3 210 77 2x htqfp80 12x12 dac1201d125 dual 12-bit dac 125 msps ? 3.3 95 65 - lqfp48 dac1008d series dual 10-bit dac up to 650/750 msps ? 1.8 / 3.3 700 76 2x, 4x, 8x hvqfn64 9x9 dac1005d series dual 10-bit dac up to 650/750 msps ? 1.8 / 3.3 435 77 2x, 4x, 8x htqfp100 14x14 dac1003d160 dual 10-bit dac 160 msps ? 3.3 210 80 2x htqfp80 12x12 dac1001d125 dual 10-bit dac 125 msps ? 3.3 95 65 - lqfp48 rf pin diodes for antenna switching t ype package number of diodes con?guration v r max i f max @ f = 100 mhz @ f = 1 mhz @ i f = 0.5 ma @ i f = 1 ma @ i f = 10 ma @ v r = 0 v @ v r = 1 v @ v r = 20 v r d typ r d typ r d typ c d typ c d typ c d typ (v) (ma) (?) (?) (?) (pf) (pf) (pf) bap70q** sot753 4 quad 50 100 77 40 5.4 0.6 0.43 0.25 bap64q** sot753 4 quad 100 100 20 10 2 0.52 0.37 0.23 bap64-02 sod523 1 sg 175 100 20 10 2 0.48 0.35 0.23 bap64-03 sod323 1 sg 175 100 20 10 2 0.48 0.35 0.23 bap64-04 sot23 2 sr 175 100 20 10 2 0.52 0.37 0.23 bap64-04w sot323 2 sr 100 100 20 10 2 0.52 0.37 0.23 bap64-05 sot23 2 cc 175 100 20 10 2 0.52 0.37 0.23 bap64-05w sot323 2 cc 100 100 20 10 2 0.52 0.37 0.23 bap64-06 sot23 2 ca 175 100 20 10 2 0.52 0.37 0.23 bap64-06w sot323 2 ca 100 100 20 10 2 0.52 0.37 0.23 * = not released for mass production ** = these parameters are based on a single diode (out of 4 in these quad pin diodes)
www.nxp.com ? 2011 nxp semiconductors n.v. all rights reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: may 2011 document order number: 9397 750 17119 printed in the netherlands
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